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BG3123...
DUAL N-Channel MOSFET Tetrode
4 5 6
* Two gain controlled input stages for UHF and VHF -tuners e.g. (NTSC, PAL) * Optimized for UHF (amp. B) and VHF (amp. A) * Integrated gate protection diodes * High AGC-range, low noise figure, high gain * Improved cross modulation at gain reduction
BG3123
6 5 4
2 1
3
VPS05604
BG3123R
6 5 4
Drain AGC HF Input G2 G1 R G1 VGG
HF Output + DC
B A
1 2 3 1
B A
2 3
GND
EHA07461
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BG3123 BG3123R***
Package SOT363 SOT363 1=G1* 2=G2 1=G1** 2=S
Pin Configuration 3=D* 3=D** 4=D** 4=D* 5=S 5=G2
Marking 6=G1** KOs 6=G1* KRs
* For amp. A; ** for amp. B
*** Target Data 180 rotated tape loading orientation available
Maximum Ratings Parameter Drain-source voltage Continuous drain current amp. A amp. B Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature IG1/2SM V G1/G2S Ptot Tstg Tch Symbol VDS ID 25 20 1 6 200 -55 ... 150 150 V mW C Value 8 Unit V mA
1
Feb-27-2004
BG3123...
Thermal Resistance Parameter Channel - soldering point 1)
Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 10 A, VG1S = 0 V, VG2S = 0 V Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 V, VDS = 0 V Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 V, VDS = 0 V Gate1-source leakage current VG1S = 6 V, VG2S = 0 V Gate2-source leakage current VG2S = 8 V, VG1S = 0 V, VDS = 0 V Drain current VDS = 5 V, VG1S = 0 V, VG2S = 4.5 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 60 k, amp. A VDS = 5 V, VG2S = 4 V, RG1 = 50 k, amp. B Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 A Gate2-source pinch-off voltage VDS = 5 V, I D = 20 A
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol
Rthchs
Value
150
Unit K/W
Symbol min. V(BR)DS +V(BR)G1SS +V(BR)G2SS +IG1SS +IG2SS IDSS IDSX VG1S(p) VG2S(p) 12 6 6 -
Values typ. max. 15 15 50 50 10
Unit
V
A nA A mA
14 14 0.7 0.6
V
2
Feb-27-2004
BG3123...
Electrical Characteristics Parameter Symbol min. Forward transconductance amp. A amp. B Gate1 input capacitance f = 10 MHz, amp. A f = 10 MHz, amp. B Output capacitance f = 10 MHz, amp. A f = 10 MHz, amp. B Power gain f = 800 MHz, amp. A f = 800 MHz, amp. B f = 45 MHz, amp. A f = 45 MHz, amp. B Noise figure f = 800 MHz, amp. A f = 800 MHz, amp. B f = 45 MHz, amp. A f = 45 MHz, amp. B Gain control range VG2S = 4 ... 0 V , f = 800 MHz Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod amp.A , AGC = 0 dB amp. B, AGC = 0 dB amp. A , AGC = 10 dB amp. B , AGC = 10 dB amp. A, AGC = 40 dB amp. B, AGC = 40 dB 90 90 98 98 96 97 91 94 103 104 G p F 45 1.8 1.8 1.4 1.6 Gp 25 24 32 30 dB Cdss 1.3 1.1 dB Cg1ss 1.9 1.5 gfs 30 25 pF Values typ. max. mS Unit
AC Characteristics V DS = 5V, V G2S = 4V, (ID = 14 mA) (verified by random sampling)
3
Feb-27-2004
BG3123...
Total power dissipation Ptot = (TS) amp. A
300
Total power dissipation Ptot = (TS) amp. B
300
mW
mW
P tot
150
P tot
120 C
200
200
150
100
100
50
50
0 0
20
40
60
80
100
150
0 0
20
40
60
80
100
120 C
150
TS
TS
Drain current ID = (IG1) VG2S = 4V amp. A
16
mA
Drain current ID = (IG1) VG2S = 4V amp. B
16
mA
12
12
ID
8
ID
A
10
10
8
6
6
4
4
2
2
0 0
10
20
30
40
50
70
0 0
10
20
30
40
50
A
70
IG1
IG1
4
Feb-27-2004
BG3123...
Output characteristics ID = (V DS) VG2S = 4V, VG1S = Parameter in V amp. A
18
mA 1.5
Output characteristics ID = (V DS) VG2S = 4V, VG1S = Parameter in V amp. B
18
mA 1.7
14
1.4
14 12
1.3
1.6
12
ID
10 8
ID
1.5
10 8
1.2
1.3
6 4 2 0 0
6 4 2 0 0
1.0
2
4
6
8
10
V
14
2
4
6
8
10
V
14
VDS
VDS
Gate 1 current IG1 = (V G1S) VDS = 5V, VG2S = Parameter in V amp. A
120
Gate 1 current IG1 = (V G1S) VDS = 5V, VG2S = Parameter in V amp. B
120
4
A
A 3
IG1
IG1
80
4 3.5 3
80
2.5
60
60
2.5
40
2
40
2
20
20
0 0
0.4
0.8
1.2
V
2
0 0
0.4
0.8
1.2
V
2
VG1S
VG1S
5
Feb-27-2004
BG3123...
Gate 1 forward transconductance g fs = (ID), VDS = 5V, VG2S = Parameter amp. A
32
mS 3V 4V 4V mS 3V 2.5V
Gate 1 forward transconductance g fs = (ID), VDS = 5V, VG2S = Parameter amp. B
25
24
g fs
20
g fs
2.5V
15
2V
16 10
12
8
2V
5
4
0 0
4
8
12
mA
20
0 0
4
8
mA
16
ID
ID
Drain current ID = (VG1S) VDS = 5V, VG2S = Parameter amp. A
28
mA 4V 3V
Drain current ID = (V G1S) VDS = 5V, VG2S = Parameter amp. B
16
mA 4V
3V
20
12
ID
16 8 12
2V
ID
10
2V
6 8
1.5V
1.5V
4
4
2
0 0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
V
2
0 0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
V
2
VG1S
VG1S
6
Feb-27-2004
BG3123...
Drain current ID = (VGG ) amp. A VDS = 5V, VG2S = 4V, RG1 = 60k
(connected to VGG, VGG =gate1 supply voltage)
18
mA
Drain current ID = (V GG) amp. B VDS = 5V, VG2S = 4V, RG1 = 50k
(connected to VGG, V GG=gate1 supply voltage)
18
mA
14 12
14 12
ID
10 8 6 4 2 0 0
ID
10 8 6 4 2 0 0
V
1
2
3
4
5
7
1
2
3
4
5
V
7
VGG
VGG
Drain current ID = (VGG) VG2S = 4V, RG1 = Parameter in k amp. A
18
mA 50
Drain current ID = (VGG) VG2S = 4V, RG1 = Parameter in k amp. B
18
mA 40
14 12
60
14
50
12
80
ID
10
100
ID
60
10 8 6 4 2 0 0
70
8 6 4 2 0 0
1
2
3
4
5
V
7
1
2
3
4
5
V
7
VGG=VDS
VGG=VDS
7
Feb-27-2004
BG3123...
Crossmodulation Vunw = (AGC) VDS = 5 V, Rg1 = 68 k amp.A
120
Crossmodulation Vunw = (AGC) VDS = 5 V, Rg1 = 56 k amp.B
120
dBV
dBV
V unw
100
V unw
100 90 90 80 0
dB
10
20
30
50
80 0
10
20
30
dB
50
AGC
AGC
Cossmodulation test circuit
VAGC
VDS 4n7
R1 10 kOhm 4n7
2.2 H
4n7
RL 50 Ohm 4n7 RGEN 50 Ohm RG1
50 Ohm
VGG
8
Feb-27-2004

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